Material Characterization

It gives information about the topography and composition of the material. It can take measurements in three different vacuum modes: low / high vacuum and ESEM. Besides examining the surface morphologies of materials, it can also perform element (EDS (EDAX)) analysis.

  • FEG has electron gun
  • It is sensitive up to 1.4 nm resolution (SE - HV)
  • It can enlarge 14 - 1000000×
  • There is an EDS detector and it can perform point, line and mapping                element analysis with this detector
  • There is a secondary electron (SE) detector
  • There is a Backscatter Electron Detector (DBS)
  • Wide Area Detector (LFD) available (10 – 200 Pa)
  • It has a Gaseous ESEM (GSED) Detector (10 – 4000 Pa). With this feature,         images can be taken without conductive coating on moist samples such         as biological samples
  • It has a beam deceleration feature (Beam Deceleration 20 V – 30 kV)

 

X-ray crystallography is a method based on the diffraction of the rays in the X-ray beam of crystallized atoms in various directions specific to the crystal. Powder, thin film, bulk materials can be analyzed. In addition, measurements can be made depending on stress and temperature (0 - 1300 °C).

  • In this system, thin film coatings and layered structures can be analyzed          by Grazing angle of incidence (GIXRD) measurements
  • Thin film thickness can be determined by reflection measurements in the        system
  • Texture and stress analyzes and Rietveld (structure analysis) analyzes can        be performed
  • Temperature dependent (30 - 1300 °C) measurement can be made at              10-2 - 10-3 Torr of vacuum levels

 

Three different sample trays are used in the multi-purpose X-Ray Diffractometer.

- Powder diffraction trays

- Temperature dependent measuring trays

- Inclined trays (three axis as Chi, Phi, z)

 

‍Atomic force microscopy examines the 3D surface morphology of materials at high resolutions. The maximum resolution achieved is at the nanometer scale and is at least 1000 times more sensitive than optical techniques.

In addition to examining the surface morphology with the AFM device, it can also detect the coating thickness of the materials using Profilometer Mode.

  • It can quantitatively measure the surface topography and 3D image from       nanometer to micron level
  • It can perform measurement in Tapping mode
  • Maximum scanning area is 25 µm × 25 µm

 

It is used to analyze the electrical, magnetic and optical properties of materials.

  • It can perform Hall coefficient, resistivity, resistivity, magneto resistance,         I/V curves, carrier concentration four contact van der Pauw technique             and mobility measurements under 1.2 Tesla magnetic field in the 10K -           600K temperature range
  • Spectral response measurements of solar cells and semiconductor                   materials can be made in the wavelength range of 300 - 1800 nm
  • Vacuum value can be reduced to 1 × 10-5 Torr